공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi MTP3055VL에 대한 설명입니다.
Transistor MOSFET N Channel 60 Volt 12 Amp 3 Pin TO-220-3
N-Channel 60 V 0.18 Ohm 48 W Logic Level Enhancement Transistor - TO-220
Power MOSFET, N Channel, 60 V, 12 A, 0.18 ohm, TO-220AB, Through Hole
12 AMPS, 60 VOLTS, LOGIC LEVEL N-CHANNEL TO-220 POWER MOSFET Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel Logic Level MOSFET has been designed specifically for low voltage, high speed switching applications i.e. power supplies and power motor controls. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies).
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)15 V
Input Capacitance570 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation48 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs15 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation48 W
Rds On Max180 mΩ
Resistance180 mΩ
Rise Time190 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time14 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)60 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm