공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1991-09-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
onsemiKSB564AOBU
Small Signal Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
onsemiKSB564ACGBU
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 200 @ 100mA 1V 100nA ICBO 800mW 110MHz
설명
유통업체에서 제공한 onsemi MPSA65에 대한 설명입니다.
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Bulk Through Hole PNP - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 1.2A 625mW 100MHz
Trans Darlington PNP 30V 1.2A 3-Pin TO-92 Bulk
This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics.
BIPOLAR TRANSISTOR, DARLINGTON; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:625mW; DC Collector Current:1.2A; DC Current Gain hFE:50000; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-92; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:1.2A; Gain Bandwidth ft Typ:100MHz; Hfe Min:20000; Package / Case:TO-92; Power Dissipation Pd:625mW; Termination Type:Through Hole
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기술 사양
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight201 mg
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)30 V
Current Rating-1.2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min20000
Max Collector Current300 mA
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityPNP
Power Dissipation625 mW
TerminationThrough Hole
Transition Frequency100 MHz
Voltage Rating (DC)-30 V