대체 부품
이 부품
대체 부품
Price @ 1000
$ 0.077
$ 0.044
Stock
87,968
98,816
Authorized Distributors
1
1
Mount
-
Through Hole
Case/Package
TO-92-3
TO-226-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
-
12 V
Max Collector Current
50 mA
50 mA
Transition Frequency
1.5 GHz
1.5 GHz
Collector Emitter Saturation Voltage
400 mV
400 mV
hFE Min
20
20
Power Dissipation
350 mW
350 mW
공급망
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.75
Introduction Date1994-10-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2006-12-31
LTD Date2007-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiKSC1845FTA
Small Signal Bipolar Transistor, 0.05A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
onsemiKSC388CYTA
Small Signal Bipolar Transistor, 0.05A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
onsemiKSC1730YTA
Tape & Box (TB) Through Hole NPN SINGLE RF Transistor 120 @ 5mA 10V 50mA 250mW 1.1GHz
설명
유통업체에서 제공한 onsemi MPS3563RLRAG에 대한 설명입니다.
NPN 350mW 2V 10nA 30V 12V 50mA TO-226£¬TO-92 Through hole mounting 5.2mm*4.19mm*5.33mm
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-92
Trans RF BJT NPN 12V 0.05A 350mW 3-Pin TO-92 T/R
SMALL SIGNAL BIPOLAR TRANSISTOR
MPS3563RLRAG, SINGLE BIPOLAR TRANSISTORS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-92-3
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)12 V
Element ConfigurationSingle
Emitter Base Voltage (VEBO)2 V
Gain14 dB
Gain Bandwidth Product1.5 GHz
hFE Min20
Max Collector Current50 mA
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation350 mW
Transition Frequency1.5 GHz