The MOCD207M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting.
Channels = 2 / Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 150 / Isolation Voltage kV = 2.5 / Operating Temperature Max. °C = 100 / Current Transfer Ratio (CTR) Min. % = 100 / Current Transfer Ratio (CTR) Max. % = 200 / Operating Temperature Min. °C = -40 / Power Dissipation (Pd) mW = 150 / Forward Voltage (Vf) Max. V = 1.5 / Output Type = Phototransistor / Collector-Emitter Saturation Voltage Max. mV = 400 / Emitter−Collector Voltage (VECO) Max. V = 7 / Forward Current (If) Max. mA = 60 / Package Type = SOIC-8 / Reverse Voltage (Vr) V = 6