Bipolar Transistor; Transistor Polarity:Quad NPN; Power Dissipation, Pd:0.3W; DC Current Gain Min (hfe):75; Package/Case:16-SOIC; C-E Breakdown Voltage:40V; DC Collector Current:200A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.