Transistor; Transistor Type:JFET; Transistor Polarity:N Channel; Breakdown Voltage, V(br)gss:25V; Zero Gate Voltage Drain Current Min, Idss:12A; Zero Gate Voltage Drain Current Max, Idss:30mA
This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.