N-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 52.
TRANSISTOR, JFET, -40V, 1MA, SOT-23-3; Transistor Type:JFET; Breakdown Voltage Vbr:-40V; Zero Gate Voltage Drain Current Idss Min:200µA; Zero Gate Voltage Drain Current Idss Max:1mA; Gate-Source Cutoff Voltage Vgs(off) Max:-1.5V; Power Dissipation Pd:350mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013)