가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MMBF4416 | 3,174 | 12500 | 4h | ||||||||
| DigiKey | MMBF4416CT-ND | 230 | 1 | Cut Tape | ||||||||
| Onlinecomponents.com | MMBF4416 | 0 | 3K | Bulk | ||||||||
| Future Electronics | MMBF4416 | 0 | 3K | Tape & Reel | ||||||||
| Master Electronics | MMBF4416 | 0 | 3K |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-05-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi MMBF4416에 대한 설명입니다.
MMBF4416 Series 30 V 10 mA Surface Mount N-Channel RF Amplifier - SOT-23
225mW 30V 1N 15mA 4pF(Max) @ 15V SOT-23-3 2.9mm*1.3mm*1mm
JFET, N CHANNEL, -30V, SOT-23-3
RF MOSFET N-CH JFET 15V SOT23-3
Trans RF FET N-CH 3-Pin SOT-23 T/R
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET
Sot-23 2N4416 Marked 6A Rohs Compliant: Yes
JFET, N CHANNEL, -30V, SOT-23-3; Breakdown Voltage Vbr: -30V; Zero Gate Voltage Drain Current Idss Min: 5mA; Zero Gate Voltage Drain Current Idss Max: 15mA; Gate-Source Cutoff Voltage Vgs(off) Max: -6V; Transistor Case Style
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Breakdown Voltage-30 V
Continuous Drain Current (ID)15 mA
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Frequency100 MHz
Gain18 dB
Gate to Source Voltage (Vgs)-30 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Noise Figure2 dB
Number of Channels1
Number of Elements1
Power Dissipation225 mW
Schedule B8541210080
Test Current5 mA
Test Voltage15 V
Voltage Rating30 V
Voltage Rating (DC)-35 V
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책