JFET, -40V, 240UA, 150DEG C; Breakdown Voltage Vbr: -40V; Zero Gate Voltage Drain Current Idss Min: 80µA; Zero Gate Voltage Drain Current Idss Max: 240µA; Gate-Source Cutoff Voltage Vgs(off) Max: -3V; Transistor Case Style: S
This device is designed for low current DC and audio applications. These devices provide excellent performance as input stages for sub-picoamp instrumentation or any high impedance signal sources. Sourced from Process 53.