유통업체에서 제공한 onsemi MJ14002G에 대한 설명입니다.
TRANSISTOR, BIPOLAR, SI, NPN, HIGH CURRENT, POWER, VCEO 80VDC, IC 60A, PD 300W, HFE 5
50 A, 120 V PNP Darlington Bipolar Power Transistor. ONSSPCTRNSTLT1T0R;
60 A, 80 V NPN Bipolar Power Transistor
HIGH-CURRENT NPN SILICON POWER TRANSISTOR Power Bipolar Transistor, 60A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin
80V 300W 60A NPN TO-3 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 60A 300000mW 3-Pin(2+Tab) TO-204 Tray
onsemi NPNTransistor, TO-204encapsulation, Through hole mounting, Maximum DC collector current60 A, maximum collector-emission voltage80 V
TRANSISTOR; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 300W; DC Collector Current: 1mA; DC Current Gain hFE: 100hFE; Transistor Case Style: TO-204AA; No.
Bipolar Transistor, Npn, 80V, To-3; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:80V; Frecuencia De Transición Ft:-; Disipación De Potencia Pd:300W; Corriente De Colector Dc:60A; Ganancia De Corriente Dc Hfe:30 |Onsemi MJ14002G