공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-04-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiMBT3904DW1T1G
Bipolar Transistors (BJT); MBT3904DW1T1G; ON SEMICONDUCTOR; NPN; 6; 40 V; 200 mA
onsemiMBT3904DW1T3G
ON SEMI MBT3904DW1T3G DUAL NPN BIPOLAR TRANSISTOR, 0.2 A, 40 V, 6-PIN SOT-363
설명
유통업체에서 제공한 onsemi MBT2222ADW1T1G에 대한 설명입니다.
Bipolar Transistor Array, General Purpose, Dual NPN, 40 V, 600 mA, 150 mW
ON SEMI MBT2222ADW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.6 A, 40 V, 6-PIN SOT-363
General Purpose Transistor Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon
40V 150mW 600mA 2 NPN SOT-363 Bipolar Transistors - BJT ROHS
MBT Series 40 V 600 mA SMT NPN Silicon General Purpose Transistor - SOT-363
600 mA 40 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
Transistor, Npn, 40V, 0.6A, Sot-363-6; Transistor Polarity:Npn; Collector Emitter Voltage Max Npn:40V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current Npn:600Ma; Continuous Collector Current Pnp:-; No. Of Pins:6Pinsrohs Compliant: Yes |Onsemi MBT2222ADW1T1G.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-363
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)40 V
Current Rating600 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min75
Max Breakdown Voltage40 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape and Reel
PolarityNPN
Power Dissipation150 mW
Schedule B8541210080
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height1.1 mm
Length2.2 mm
Width1.35 mm
규정 준수
환경 분류
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책