onsemi MBRM140T1G

Rectifier Diode, Schottky, 1 Phase, 1 Element, 1A, 40V V(RRM), Silicon, DO-216AA

DIODE, SCHOTTKY BARRIER, VR 40V, IF 1A, PKG CASE 457,VF 0.55V, TJ +125DEGC, CS 50A

Rectifier Diode Schottky 40V 1A 2-Pin(1+Tab) Power Mite T/R

onsemi Schottky Diodes Diodes, 1A, 40V, surface mount, POWERMITEencapsulation, 2needle

Schottky Rectifier, General Purpose, 40 V, 1 A, Single, DO-216AA, 2 Pins, 850 mV

Schottky Diodes; MBRM140T1G; ON SEMICONDUCTOR; 300 mV; 50 A; 500 µA; No

DIODE, SCHOTTKY, 1A, POWERMITE; Repetitive Reverse Voltage Vrrm Max: 40V; Forward Current If(AV): 1A; Diode Configuration: Single; Diode Case Style: DO-216AA; No. of Pins: 2Pins; Forward Voltage VF Max: 850mV; Forward Surge Cu

The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature space saving surface mount Rectifier. With its unique heatsink design the Powermite has the same thermal performance as the SMA while being 50% smaller in footprint area and delivering one of the lowest height profiles < 1.1 mm in the industry. Because of its small size it is ideal for use in portable and battery powered products such as cellular and cordless phones chargers notebook computers printers PDAs and PCMCIA cards. Typical applications are ac/dc and dc-dc converters reverse battery protection and "Oring" of multiple supply voltages and any other application where performance and size are critical.