onsemi KSD1616AGTA

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
$ 0.156
Production

가격 및 재고

데이터시트 및 문서

onsemi KSD1616AGTA에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet7 페이지4년 전
Datasheet0 페이지0년 전

Newark

Future Electronics

onsemi

element14 APAC

재고 내역

3개월간의 트렌드:
-18.96%

공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-04
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

관련 부품

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
TRANS NPN 60V 1A TO92-3 / Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

설명

유통업체에서 제공한 onsemi KSD1616AGTA에 대한 설명입니다.

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
KSD1616A Series 60 V 1 A 0.75 W NPN Epitaxial Silicon Transistor - TO-92 Ammo
Bipolar Transistors - BJT NPN Epitaxial Transistor
Trans GP BJT NPN 60V 1A 750mW 3-Pin TO-92 Fan-Fold
60V 750mW 1A 200@100mA2V 160MHz 150mV@1A50mA NPN +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 60V, TO-226AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 160MHz; Power Dissipation Pd: 750mW; DC Collector Current: 1A; DC Current Gain hFE: 200hFE; T

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