공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-12-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiKSB1116SYBU
Bulk Through Hole PNP KSB1116 Bipolar (BJT) Transistor 135 @ 100mA 2V 1A 750mW 120MHz
설명
유통업체에서 제공한 onsemi KSA1013YTA에 대한 설명입니다.
Bipolar (BJT) Single Transistor, PNP, -160 V, 50 MHz, 900 mW, -1 A, 160
160V 900mW 160@200mA,5V 1A PNP TO-92-3 Bipolar (BJT) ROHS
Bipolar Transistors - BJT PNP Epitaxial Transistor
Small Signal Bipolar Transistor, 1A I(C), 160V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 160V 1A 900mW 3-Pin TO-92L Fan-Fold
1Ã×A 160V 900mW 1A 60@200mA5V 50MHz 1.5V@500mA50mA PNP +150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
onsemi PNPTransistor, TO-92encapsulation, Through hole mounting, Maximum DC collector current-1 A, maximum collector-emission voltage-160 V
Transistor, BIPOL, PNP, -160V, TO-226AA-3; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-160V; Transition Frequency ft:50MHz; Power Dissipation Pd:900mW; DC Collector Current:-1A; DC Current Gain hFE:160hFE; Transistor Case Style:TO-226AA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (27-Jun-2018)
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-92-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight371.1027 mg
Technical
Collector Base Voltage (VCBO)-160 V
Collector Emitter Breakdown Voltage-160 V
Collector Emitter Saturation Voltage-1.5 V
Collector Emitter Voltage (VCEO)160 V
Current Rating-1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-6 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min160
Max Breakdown Voltage160 V
Max Collector Current1 A
Max Frequency1 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation900 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityPNP
Power Dissipation900 mW
Schedule B8541210080
Transition Frequency50 MHz
Voltage Rating (DC)-160 V
Dimensions
Height11.6 mm
Length5.1 mm
Width4.1 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책