공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-23
Lifecycle StatusObsolete (Last Updated: 1 month ago)
관련 부품
Diodes Inc.DMG7401SFG-13
P-Ch MOSFET 30V 9.8A 11mΩ@12A,20V 25V 3V@250µA 58nC@10V 2.987nF@15V 940mW(Ta) PDI-33338 SMD
설명
유통업체에서 제공한 onsemi IRFS634B에 대한 설명입니다.
Trans MOSFET N-CH 250V 8.1A 3-Pin(3+Tab) TO-220F
250V N-CHANNEL MOSFET Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Number of Terminals3
Technical
Continuous Drain Current (ID)8.1 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance450 mΩ
Drain to Source Voltage (Vds)250 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation38 W
Rise Time75 ns
Turn-Off Delay Time100 ns
Turn-On Delay Time15 ns
Dimensions
Height20.4 mm