onsemi HUF76407D3
$ 0.444
Obsolete
가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUF76407D3 | 4,006 | 701 | |||||||||
| Rochester Electronics | HUF76407D3 | 22,053 | 1h | |||||||||
| Microchip USA | HUF76407D3 | 395 | 600 | Tray | 18h | |||||||
| Win Source | WS-HUF76407D3 | 20 | 155 | 2h | ||||||||
| Worldway Electronics | HUF76407D3 | 11,749 | 7 | Tube | 1h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-12-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTD12NF06L-1
N-channel 60 V, 0.08 Ohm typ., 12 A STripFET II Power MOSFET in a IPAK package
InfineonIRFU9024NPBF
MOSFET, Power; P-Channel; 20 Volts (Max.); -11 A (Max.); 38 W; 13 ns (Typ.)
설명
유통업체에서 제공한 onsemi HUF76407D3에 대한 설명입니다.
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET | MOSFET N-CH 60V 12A IPAK
PWR MOS ULTRAFET 60V/14A/0.119 OHMS N-CH LL TO-251AA
MOSFET N-CH 60V 12A IPAK
Power Field-Effect Transistor, 12A I(D), 60V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Current Rating11 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance117 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance350 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation38 W
Rds On Max92 mΩ
Rise Time32 ns
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)60 V
Dimensions
Height9.85 mm