가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HUF75339G3 | 287 | 228 | |||||||||
| Rochester Electronics | HUF75339G3 | 3,009 | 8h | |||||||||
| Microchip USA | HUF75339G3 | 304 | 300 | Tube | 2h | |||||||
| Win Source | WS-HUF75339G3 | 52,350 | 40 | 9h | ||||||||
| Klychip | HUF75339G3 | 문의하기 | 1 | >1wk |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
관련 부품
STMicroelectronicsSTW14NK50Z
N-Channel 500V - 0.34 Ohm - 14A TO-247 Zener-Protected SuperMesh(TM) POWER MOSFET
설명
유통업체에서 제공한 onsemi HUF75339G3에 대한 설명입니다.
75 A 55 V 0.012 ohm N-CHANNEL Si POWER MOSFET TO-247
MOSFET N-CHAN 55V 75A TO-247
Power Field-Effect Transistor, 75A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
PWR MOS ULTRAFET 55V/75A/0.012OHMS N-CHANNEL TO-247
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating75 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation200 W
Rds On Max12 mΩ
Rise Time60 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)55 V
Dimensions
Height24.75 mm