onsemi HGTG7N60A4D

Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail
Obsolete

가격 및 재고

데이터시트 및 문서

onsemi HGTG7N60A4D에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

Newark

Datasheet14 페이지4년 전

IHS

Upverter

onsemi

Fairchild Semiconductor

재고 내역

3개월간의 트렌드:
+0.00%

공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-03-24
Lifecycle StatusObsolete (Last Updated: 4 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

관련 부품

TO-247, COMP, N-CH 600V SMPS II SERIES IGBT W/STEALTH DIODE
onsemiFGH20N6S2
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.7V @ 15V 7A 28A 125W 7.7ns/87ns
InfineonIRG4PC30SPBF
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
InfineonIRG4PC30FPBF
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package, TO247-3, RoHS
IRG4P Series Ultrafast Soft Recovery Diode Through Hole IGBT - TO-247-3
STMicroelectronicsSTGW20V60F
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed

설명

유통업체에서 제공한 onsemi HGTG7N60A4D에 대한 설명입니다.

Trans IGBT Chip N-CH 600V 34A 3-Pin(3+Tab) TO-247 Rail
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-247
125W 1.9V withbuilt-indiode 600V 34A TO-247-3 15.87mm*4.82mm*20.82mm
Single Igbt, 600V, 34A; Corriente De Colector Dc:34A; Tensión De Saturación Colector-Emisor Vce(On):1.9V; Disipación De Potencia Pd:125W; Tensión Colector Emisor V(Br)Ceo:600V; Núm. De Contactos:3; Temperatura De Trabajo Máx.:150°C |Onsemi HGTG7N60A4D
The HGTP7N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.

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