onsemi FQT5P10TF

ON SEMICONDUCTOR - FQT5P10TF - MOSFET-Transistor, p-Kanal, -1 A, -100 V, 0.82 ohm, -10 V, -4 V

P CHANNEL MOSFET, -100V, 1A SOT-223; Tra; Transistor Polarity:P Channel; Continuous Drain Current Id:-1A;

P-Channel 100 V 1.05 Ohm Surface Mount Mosfet - SOT-223

P-Channel QFET® MOSFET -100V, -1.0A, 1.05Ω

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -1 / Drain-Source Voltage (Vds) V = -100 / ON Resistance (Rds(on)) Ohm = 1 / Gate-Source Voltage V = 30 / Fall Time ns = 30 / Rise Time ns = 70 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2