가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FQPF9N25CYDTU | 2,400 | 1563 | 13h | ||||||||
| Verical | FQPF9N25CYDTU | 795 | 623 | |||||||||
| Rochester Electronics | FQPF9N25CYDTU | 1,795 | 11h | |||||||||
| Flip Electronics | FQPF9N25CYDTU | 2,400 | >1wk | |||||||||
| Farnell | FQPF9N25CYDTU | 0 | 800 | Tube | 11h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-22
Lifecycle StatusObsolete (Last Updated: 5 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
설명
유통업체에서 제공한 onsemi FQPF9N25CYDTU에 대한 설명입니다.
Power MOSFET, N-Channel, QFET®, 250 V, 8.8 A, 430 mΩ, TO-220F
Power Field-Effect Transistor, 8.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 250V 8.8A 3-Pin(3+Tab) TO-220F Rail
Mosfet S - Single; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:8.8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:38W Rohs Compliant: Yes |Onsemi FQPF9N25CYDTU
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Weight2.565 g
Technical
Continuous Drain Current (ID)8.8 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance430 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time65 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance710 pF
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation38 W
Rds On Max430 mΩ
Rise Time85 ns
Turn-Off Delay Time90 ns
Turn-On Delay Time15 ns
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm