공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
관련 부품
STMicroelectronicsSTP4NK80ZFP
N-CHANNEL 800V - 3 OHM - 3A TO-220FP Zener-Protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP3NK90ZFP
N-Channel 900 V 4.8 Ohm Flange Mount SuperMESH Power Mosfet - TO-220FP
설명
유통업체에서 제공한 onsemi FQPF3N80CYDTU에 대한 설명입니다.
Trans MOSFET N-CH 800V 3A 3-Pin(3+Tab) TO-220F Rail
N-Channel QFET® MOSFET 800V, 3A, 4.8Ω
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.565 g
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance4.8 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance705 pF
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation39 W
Rds On Max4.8 Ω
Rise Time43.5 ns
Turn-Off Delay Time22.5 ns
Voltage Rating (DC)800 V