공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-05-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09
관련 부품
onsemiFQPF8N60CYDTU
MOSFET N-CH 600V 7.5A TO-220F / Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220F Rail
STMicroelectronicsSTP6NK60ZFP
N-channel 600 V - 1 Ohm - 6 A - TO-220 Zener-Protected SuperMESH(TM) Power MOSFET
설명
유통업체에서 제공한 onsemi FQP7N65C에 대한 설명입니다.
MOSFET N-CH 650V 7A TO-220
Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
650V N-Channel Advance Q-FET C-Series
N-CHANNEL POWER MOSFET
MOSFETs N-CH/650V/7A/QFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)7 A
Current Rating7 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.245 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation160 W
Rds On Max1.4 Ω
Rise Time50 ns
Turn-Off Delay Time90 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)650 V
Dimensions
Height18.95 mm