onsemi FQP4N80

Power Mosfet, N-channel, Qfet®, 800 V, 3.9 A, 3.6 Ω, TO-220
$ 0.913
EOL
제조업체 페이지데이터시트

가격 및 재고

모든 가격 할인 보기
DistributorSKUMinPkg
Rochester ElectronicsFQP4N80230
2h
FarnellFQP4N8001
1d
Component Stockers USAFQP4N801,174
17h
Win SourceWS-FQP4N802,84135
3h
Worldway ElectronicsFQP4N8011,7827Tube
2h

데이터시트 및 문서

onsemi FQP4N80에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet8 페이지12년 전
Datasheet0 페이지0년 전

Future Electronics

onsemi

Fairchild Semiconductor

iiiC

재고 내역

3개월간의 트렌드:
-1.46%
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공급망

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-10
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

관련 부품

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MOSFET N-CH 800V 4.8A TO-220
세부 사항
onsemiFQP3N80C
Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220
세부 사항
onsemiFQP5N60C
Power MOSFET, N-Channel, QFET®, 600 V, 4.5 A, 2.5 Ω, TO-220
세부 사항
VishayIRFBE30PBF
IRFBE30PBF N-CHANNEL MOSFET TRANSISTOR, 4.1 A, 800 V, 3-PIN TO-220AB
세부 사항
VishayIRFBG30PBF
Single N-Channel 1000 V 5 Ohms Flange Mount Power Mosfet - TO-220-3
세부 사항
VishayIRFBF30PBF
Single N-Channel 900 V 3.7 Ohms Flange Mount Power Mosfet - TO-220AB
세부 사항

설명

유통업체에서 제공한 onsemi FQP4N80에 대한 설명입니다.

Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, TO-220
onsemi
Transistor,mosfet,n-Channel,800V V(Br)Dss,3.9A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP4N80
Newark
Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail
Avnet
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 13
Farnell
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

이미지

Augswan
RS
TME
iiiC
LZChips
Future Electronics
Conrad
Rochester Electronics

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  • ON SEMICONDUCT
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  • ON Semiconductor Inc.
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