공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-23
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
설명
유통업체에서 제공한 onsemi FQL40N50에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 500 V, 40 A, 110 mΩ, TO-264
Trans MOSFET N-CH 500V 40A 3-Pin(3+Tab) TO-264 Rail
N-Channel 500 V 0.11 O Flange Mount Mosfet - TO-264
MOSFET, N-CH, 500V, 40A, 150DEG C, 460W; Available until stocks are exhausted Alternative available
Qf 500V 110Mohm To264 Rohs Compliant: Yes
场效应管, MOSFET, N沟道, 500V, 40A, 150度 C, 460W;
Power Field-Effect Transistor, 40A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA
POWER FIELD-EFFECT TRANSISTOR, 4
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-264-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.756 g
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time250 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance7.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation460 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation460 W
Rds On Max110 mΩ
Rise Time440 ns
Schedule B8541290080
Turn-Off Delay Time350 ns
Turn-On Delay Time140 ns
Voltage Rating (DC)500 V
Dimensions
Height29 mm
Length20 mm
Width5 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책