유통업체에서 제공한 onsemi FQD19N10TM에 대한 설명입니다.
MOSFET Transistor, N Channel, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
N-Channel Power MOSFET, QFET®, 100 V, 15.6 A, 63 mΩ, DPAK
N-Channel 100 V 0.1 Ohm Surface Mount Mosfet - TO-252-3
Power Field-Effect Transistor, 15.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
2.5W(Ta),50W(Tc) 25V 4V@ 250µA 25nC@ 10 V 1individualNChannel 100V 100mΩ@ 7.8A,10V 15.6A 780pF@25V TO-252AA SMD mount 2.52mm(height)
MOSFET, N-CH, 100V, 15.6A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 15.6A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.078ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs:
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.