유통업체에서 제공한 onsemi FQD12N20TM에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK
TRANSISTOR, N-CHANNEL, QFET MOSFET, 200V, 9A, 280 MOHM AT VGS 10V, DPAK
XTR,PWR,MFT,FQD12N20,DPK 200V,9.0A,N-CHNL MOSFET RDS(on)=0.28 OHM,DPAK PKG
N-Channel 200 V 0.28 Ohm Surface Mount QFET Mosfet - DPAK
Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, N-CH, 200V, 9A, TO-252-3; Transi; MOSFET, N-CH, 200V, 9A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; No. of Pins:3Pins
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..