가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | FQB8N90CTM | 75,200 | 7h | |||||||||
| Newark | FQB8N90CTM | 0 | 800 | Tape & Reel | ||||||||
| Avnet | FQB8N90CTM | 0 | 800 | 15h | ||||||||
| Farnell | FQB8N90CTM | 0 | 800 | Tape & Reel | 12h | |||||||
| Mouser | 512-FQB8N90CTM | 686 | 1 | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-01-03
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTB10N65K3
N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3(TM) Power MOSFET in D2PAK package
VishayIRFBF30STRLPBF
125W(Tc) 20V 4V@ 250¦ÌA 78nC@ 10 V 1N 900V 3.7¦¸@ 2.2A,10V 3.6A 1.2nF@25V D2PAK,TO-263
InfineonIPB65R125C7ATMA1
MOSFET N-CH 650V 18A D2PAK / N-Channel 650 V 18A (Ta) 101W (Tc) Surface Mount PG-TO263-3
설명
유통업체에서 제공한 onsemi FQB8N90CTM에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 900 V, 6.3 A, 1.9 Ω, D2PAK
MOSFET N-CH 900V 6.3A D2PAK / Trans MOSFET N-CH 900V 6.3A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 6.3A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)6.3 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance1.9 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.08 nF
Max Operating Temperature150 °C
Max Power Dissipation171 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape (CT)
Rds On Max1.9 Ω
Rise Time110 ns
Turn-Off Delay Time70 ns
Turn-On Delay Time40 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm