공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-06-22
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
관련 부품
InfineonSPB04N60S5ATMA1
MOSFET N-CH 600V 4.5A TO-263 / Trans MOSFET N-CH 600V 4.5A 3-Pin(2+Tab) D2PAK T/R
설명
유통업체에서 제공한 onsemi FQB6N50TM에 대한 설명입니다.
Trans MOSFET N-CH 500V 5.5A 3-Pin (2+Tab) D2PAK T/R
3.13W(Ta),130W(Tc) 5V@ 250¦ÌA 22nC@ 10V 1N 500V 1.3¦¸@ 2.8A,10V 790pF@25V D2PAK
Power Field-Effect Transistor, 5.5A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
600V N-Channel MOSFET
N-CHANNEL POWER MOSFET
MOSFETs 500V N-Channel QFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.3 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance790 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation98 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.13 W
Rds On Max1.3 Ω
Rise Time65 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)500 V
Dimensions
Height4.95 mm