공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-16
Lifecycle StatusEOL (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
설명
유통업체에서 제공한 onsemi FQAF16N50에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 500 V, 11.3 A, 320 mΩ, TO-3PF
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,11.3A I(D),TO-247VAR
Trans MOSFET N-CH 500V 11.3A 3-Pin(3+Tab) TO-3PF Rail
Power Field-Effect Transistor, 11.3A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
POWER FIELD-EFFECT TRANSISTOR, 1
POWER MOSFET, N-CHANNEL, QFET®;
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.962 g
Technical
Continuous Drain Current (ID)11.3 A
Current Rating11.3 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance320 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time100 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max320 mΩ
Rise Time180 ns
Turn-Off Delay Time130 ns
Turn-On Delay Time45 ns
Voltage Rating (DC)500 V
Dimensions
Height16.7 mm
Length15.7 mm
Width5.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책