공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-04-24
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
설명
유통업체에서 제공한 onsemi FQAF13N80에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 800V, 8A, 750mΩ, TO-3PF
N-Channel 800 V 0.75 Ohm Through Hole Mosfet - TO-3PF
Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-3PF Rail
MOSFET, N-CH, 800V, 8A, 150DEG C, 120W; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.962 g
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vds)800 V
Element ConfigurationSingle
Fall Time110 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.5 nF
Max Operating Temperature150 °C
Max Power Dissipation120 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation120 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time150 ns
Turn-Off Delay Time155 ns
Turn-On Delay Time60 ns
Voltage Rating (DC)800 V
Dimensions
Height16.7 mm
Length15.7 mm
Width5.7 mm