가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | FODM217AR2 | 1,515 | 6250 | 1d | ||||||||
| DigiKey | FODM217AR2OSCT-ND | 251 | 1 | Cut Tape | ||||||||
| Flip Electronics | FODM217AR2 | 1,515 | >1wk | |||||||||
| Newark | FODM217AR2 | 0 | 3K | Tape & Reel | ||||||||
| Onlinecomponents.com | FODM217AR2 | 0 | 250 | Bulk |
공급망
Country of OriginThailand
Harmonized Tariff Schedule (HTS) Code8541.40.80.00
Introduction Date2017-02-10
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi FODM217AR2에 대한 설명입니다.
Transistor Output Optocoupler, 1-Element, 3750V Isolation
Optocoupler DC-IN 1-CH Transistor DC-OUT 4-Pin MFP T/R
Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package
Optocoupler, Transistor, 3.75Kv, Sop-4; No. Of Channels:1 Channel; Optocoupler Case Style:Sop; No. Of Pins:4Pins; Forward Current If Max:50Ma; Isolation Voltage:3.75Kv; Ctr Min:80%; Collector Emitter Voltage V(Br)Ceo:80V Rohs Compliant: Yes |Onsemi FODM217AR2
The FODM217 Series single channel, DC sensing input, optocoupler consists of one gallium arsenide (GaAs) infrared light emitting diode optically coupled to one phototransistor, in a compact, half-pitch, mini-flat, 4-pin package. The input-output isolation voltage, VISO, is rated at 3,750 VACRMS.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Weight120 mg
Technical
Collector Emitter Breakdown Voltage80 V
Collector Emitter Voltage (VCEO)80 V
Current Transfer Ratio80 %
Dark Current100 nA
Forward Current50 mA
Forward Voltage1.4 V
Isolation Voltage3750 Vrms
Max Junction Temperature (Tj)125 °C
Max Operating Temperature110 °C
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Schedule B8541408000
Turn-Off Delay Time3 µs
Turn-On Delay Time3 µs
Dimensions
Height2.39 mm