onsemi FOD817B300

DC-IN 1-CH Transistor DC-OUT 4-Pin PDIP Black Box / OPTOISOLATOR 5KV TRANSISTOR 4DIP

FOD817B Series Single Channel 70 V 5000 Vrms Phototransistor Optocoupler - DIP-4

70V 5000V 50mA 0.1V@1mA,20mA 1 6V 1.2V DC DIP-4 Optocouplers - Phototransistor Output ROHS

Transistor Output Optocoupler, 1-Element, 5000V Isolation

OPTOCOUPLER, TRANSISTOR, 5KV, DIP-4; No. of Channels: 1 Channel; Optocoupler Case Style: DIP; No. of Pins: 4Pins; Forward Current If Max: 50mA; Isolation Voltage: 5kV; CTR Min: 130%; Collector Emitter Voltage V(br)ceo: 70V; Pro

The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package.

Collector-Emitter Voltage (VCEO) Max. V = 70 / Collector Current Max. mA = 50 / Power Dissipation (Pd) mW = 150 / Reverse Voltage (Vr) V = 6 / Package Type = DIP-4 / Collector-Emitter Saturation Voltage Max. mV = 200 / Emitter−Collector Voltage (VECO) Max. V = 6 / Forward Voltage (Vf) Max. V = 1.2 / Output Type = Phototransistor / Isolation Voltage kV = 5 / Forward Current (If) Max. mA = 50 / Current Transfer Ratio (CTR) Min. % = 130 / Operating Temperature Max. °C = 110 / Operating Temperature Min. °C = -55 / Current Transfer Ratio (CTR) Max. % = 260 / Channels = 1