가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Flip Electronics | FJV3104RMTF | 448,240 | 6d | |||||||||
| Avnet | FJV3104RMTF | 0 | 1 | 4h | ||||||||
| Component Stockers USA | FJV3104RMTF | 981,140 | 16h | |||||||||
| Win Source | WS-FJV3104RMTF | 3,340 | 1750 | 2h | ||||||||
| Worldway Electronics | FJV3104RMTF | 28,772 | 7 | Tape & Reel | 1h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-29
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
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설명
유통업체에서 제공한 onsemi FJV3104RMTF에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R
Pre-Biased "digital" Transistor,50V V(Br)Ceo,100Ma I(C),sot-23 Rohs Compliant: Yes
NPN Epitaxial Silicon Transistor with Bias Resistor
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min68
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation200 mW
Transition Frequency250 MHz
Voltage Rating (DC)50 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm