공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-04-29
Lifecycle StatusObsolete (Last Updated: 1 week ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
관련 부품
NXP SemiconductorsBUJ105AB,118
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
설명
유통업체에서 제공한 onsemi FJB3307DTM에 대한 설명입니다.
Trans GP BJT NPN 400V 8A 3-Pin(2+Tab) D2PAK
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-263AB, Plastic/Epoxy, 2 Pin
High Voltage Fast Switching NPN Power Transistor
TRANSISTOR, NPN, 400V, 8A, D2PAK; Transi; TRANSISTOR, NPN, 400V, 8A, D2PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:400V; Power Dissipation Pd:1.72W; DC Collector Current:8A; DC Current Gain hFE:40; No. of Pins:2; Package / Case:3-D2-PAK
The FJB3307D is a 700 V 8 A NPN Silicon Epitaxial Planar Transistor. The FJB3307D is designed for high speed switching applications which utilizes the industry standard surface mount TO-263 (D2PAK)package offering flexibility in design and excellent Power Dissipation.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Collector Base Voltage (VCBO)700 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage3 V
Collector Emitter Voltage (VCEO)400 V
Continuous Collector Current8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)9 V
hFE Min5
Max Breakdown Voltage400 V
Max Collector Current8 A
Max Frequency1 MHz
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation1.72 W
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm