공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-08-19
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
onsemiSGS5N60RUFDTU
Insulated Gate Bipolar Transistor, 8A I(C), 600V V(BR)CES, N-Channel, TO-220AB
STMicroelectronicsSTGF15H60DF
STGF15Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
설명
유통업체에서 제공한 onsemi FGPF4536에 대한 설명입니다.
Trans IGBT Chip N-CH 360V 3-Pin(3+Tab) TO-220F Tube
Insulated Gate Bipolar Transistor, 360V V(BR)CES, N-Channel
RAIL/360V 50A 4TH GEN PDP IGBT
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
INSULATED GATE BIPOLAR TRANSISTO
Using novel trench IGBT technology, Fairchild’s new series of trench IGBTs offer the optimum performance for consumer appliances, PDP TV and lighting applications where low conduction and switching losses are essential.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.270003 g
Technical
Collector Emitter Breakdown Voltage360 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)360 V
Element ConfigurationSingle
Max Operating Temperature150 °C
Max Power Dissipation28.4 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation28.4 W