공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-03-15
LTD Date2010-09-15
관련 부품
onsemiFGPF50N30TTU
IGBT, 300V, N-CHANNEL, TO-220AB / IGBT Trench 300 V 46.8 W Through Hole TO-220F-3
STMicroelectronicsSTGF3NC120HD
STGF3NC120HD Series 1200 V 7 A Very Fast IGBT with Ultrafast Diode - TO-220FP
STMicroelectronicsSTGF10NC60KD
STGF10NC60KD Series 600 V 9 A N-Channel Power Mesh IGBT - TO-220FP
설명
유통업체에서 제공한 onsemi FGPF30N30TTU에 대한 설명입니다.
IGBT Trench 300V 44.6W Through Hole TO-220F
Insulated Gate Bipolar Transistor, 300V V(BR)CES, N-Channel, TO-220AB
IGBT, 300V, N-CHANNEL, TO-220AB
IGBTs 300V 30A PDP Trench IGBT
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage300 V
Collector Emitter Voltage (VCEO)300 V
Element ConfigurationSingle
Fall Time300 ns
Max Operating Temperature150 °C
Max Power Dissipation44.6 W
Min Operating Temperature-55 °C
Number of Elements1