공급망
Country of OriginMainland China, Philippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-11-04
Lifecycle StatusProduction (Last Updated: 4 weeks ago)
관련 부품
STMicroelectronicsSTGD18N40LZT4
IGBT, 400V, 25A, DPAK; Transistor Type:IGBT; DC Collector Current:25A; Collector
onsemiISL9V3040D3ST
ISL9V3040D3ST Series 400 V 21 A Surface Mount N-Channel Ignition IGBT - TO-252AA
onsemiISL9V2040D3ST
Trans IGBT Chip N-CH 390V 10A 130W 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
STMicroelectronicsSTGD19N40LZ
Trans IGBT Chip N-CH 365V 25A 125000mW Automotive 3-Pin(2+Tab) DPAK T/R
설명
유통업체에서 제공한 onsemi FGD3040G2-F085에 대한 설명입니다.
Ecospark 2 300Mj 400 V N-Channel Ignition IGBT Surface Mount IGBT - TO-252AA
Trans IGBT Chip N=-CH 390V 25.6A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R
N-channel ignition IGBT for automotive ignition coil driver circuits and coil on plug applications.
Transistor IGBT Chip N-CH 400V 41A 3-Pin TO-252AA T/R
Avnet Japan
TRANSISTOR, ECOSPARK2, 300MJ AT TJ 25C, 400V, N-CHANNEL IGNITION IBGT
onsemi IGBT, maximum 300 V, maximum 41 A
晶体管, IGBT, AECQ101, 400V, 41A, 175度 C, 150W;
Tape Reel / Ecospark 2 Ignition Igbt
FGD3040G2_F085 Fairchild/ON Semiconductor
150W 41A 400V TO-252AA IGBTs ROHS
Insulated Gate Bipolar Transistor
FGD3040G2_F085 - ECOSPARK2 IGN-I
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Clamping Voltage400 V
Collector Emitter Breakdown Voltage400 V
Collector Emitter Saturation Voltage1.15 V
Collector Emitter Voltage (VCEO)390 V
Continuous Collector Current41 A
Element ConfigurationSingle
Fall Time15 µs
Max Breakdown Voltage400 V
Max Collector Current23.2 A
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation150 W
Rise Time7 µs
Schedule B8541290080
Turn-Off Delay Time4.8 µs
Turn-On Delay Time900 ns
Dimensions
Height2.517 mm