공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-07-01
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2013-03-12
LTD Date2013-09-12
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
관련 부품
Rochester ElectronicsIRG6B330UDPBF
330V UltraFast Copack Plasma Display Panel Trench IGBT in a TO-220AB package
설명
유통업체에서 제공한 onsemi FGA90N33ATDTU에 대한 설명입니다.
Trans IGBT Chip N-CH 330V 90A 3-Pin(3+Tab) TO-3P(N) Tube
Insulated Gate Bipolar Transistor, 90A I(C), 330V V(BR)CES, N-Channel
223W 1.6V 330V 90A TO-3P 15.8mm*5mm*18.9mm
Using Novel Trench IGBT Technology, Fairchild's new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage330 V
Collector Emitter Voltage (VCEO)330 V
Element ConfigurationSingle
Fall Time300 ns
Max Collector Current90 A
Max Operating Temperature150 °C
Max Power Dissipation223 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time23 ns