onsemi FGA90N30TU

Trans IGBT Chip N-CH 300V 90A 3-Pin(3+Tab) TO-3P Rail
$ 1.26
Obsolete
데이터시트

가격 및 재고

데이터시트 및 문서

onsemi FGA90N30TU에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet10 페이지19년 전

Factory Futures

Farnell

Mouser

재고 내역

3개월간의 트렌드:
Restocked

공급망

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-01-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)

관련 부품

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Preliminary Technical Information PolarTM IGBT for PDP Applications | IGBT 270V 90A 150W TO3P
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설명

유통업체에서 제공한 onsemi FGA90N30TU에 대한 설명입니다.

Trans IGBT Chip N-CH 300V 90A 3-Pin(3+Tab) TO-3P Rail
IGBT 300V 90A 219W Through Hole TO-3P
Insulated Gate Bipolar Transistor, 90A I(C), 300V V(BR)CES, N-Channel
IGBT, TO-3P; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:300V; Current Ic Continuous a Max:90A; Voltage, Vce Sat Max:1.4V; Power Dissipation:219W; Case Style:TO-3P; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:300V; Current Ic @ Vce Sat:20A; Current, Icm Pulsed:220A; No. of Pins:3; Power, Pd:219W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Max:150°C; Temperature, Tj Min:-55°C; Thermal Resistance, Junction to Case A:0.57°C/W; Time, Fall:110ns; Time, Rise:200ns; Transistors, No. of:1

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