설명
유통업체에서 제공한 onsemi FGA20S120M에 대한 설명입니다.
Trans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-3P(N) Rail
1200V, 20A, Shorted-anode IGBT
Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel
IGBT TRENCH FS 1200V 40A TO-3P
IGBT,N CH,1200V,40A,TO3PN; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:1.2kV; Power Dissipation Pd:348W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-3PN; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:348W
Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.401 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage1.55 V
Collector Emitter Voltage (VCEO)1.2 kV
Element ConfigurationSingle
Fall Time480 ns
Max Collector Current40 A
Max Operating Temperature175 °C
Max Power Dissipation348 W
Min Operating Temperature-55 °C
Number of Elements1
Dimensions
Height20.1 mm
Length15.8 mm
Width5 mm