관련 부품
onsemiRHRD660S9A
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252AA
VishayV10WM100-M3/I
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-252AA
VishayV10WL45-M3/I
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 45V V(RRM), Silicon, TO-252AA
onsemiRURD660S9A
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 6A, 600V V(RRM), Silicon, TO-252
설명
유통업체에서 제공한 onsemi FFD08S60S-F085에 대한 설명입니다.
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-252AA
Rectifier Diode Switching 600V 8A 30ns Automotive 3-Pin(2+Tab) DPAK T/R
Single 8A 100Ã×A@600V 2.1V@8A 800V DPAK-3 Diodes - General Purpose ROHS
Rectifiers 8A, 600V Stealth II Rectifier
600V 80A 30ns 100μA 8A Discrete TO-252AA SMD 2.39mm H
DIODE GEN PURP 600V 8A TO252AA
TAPE REEL/IGBT FOR HID APPLICATION
The FFD08S60S_F085 is stealth 2 rectifier with soft recovery characteristics (trr<30ns). They has half the recovery time of hyperfast rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252
MountSurface Mount
Number of Terminals2
Weight260.37 mg
Technical
Average Rectified Current8 A
Element ConfigurationSingle
Forward Current8 A
Forward Voltage2.6 V
Max Forward Surge Current (Ifsm)80 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current8 A
Max Repetitive Reverse Voltage (Vrrm)600 V
Max Reverse Voltage (DC)600 V
Max Surge Current80 A
Min Operating Temperature-65 °C
Number of Elements1
Peak Non-Repetitive Surge Current80 A
Peak Reverse Current100 µA
Recovery Time30 ns
Reverse Recovery Time30 ns
Reverse Standoff Voltage600 V
Reverse Voltage600 V
Schedule B8541100080
Dimensions
Height2.517 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCAffected
RoHSCompliant
규정 준수 정책