공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-04-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-10-20
LTD Date2008-04-20
관련 부품
VishaySI8497DB-T2-E1
P-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 13A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 onsemi FDZ7064N에 대한 설명입니다.
30V/12V, 7.5/6.5MO, NCH, SINGLE, BGA 3.5X4, 300A GOX, PTII
MOSFET N-CH 30V 13.5A 30BGA
MOSFETs 30V N-Ch BGa MOSFET Logic Level
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL POWER MOSFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageBGA
MountSurface Mount
Number of Pins30
Number of Terminals30
Technical
Continuous Drain Current (ID)13.5 A
Current Rating13.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.843 nF
Max Operating Temperature175 °C
Max Power Dissipation2.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.2 W
Rds On Max7 mΩ
Rise Time9 ns
Turn-Off Delay Time71 ns
Voltage Rating (DC)30 V