가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FDZ299P | 9,000 | 902 | |||||||||
| Rochester Electronics | FDZ299P | 14,445 | 12h | |||||||||
| Microchip USA | FDZ299P | 1,539 | 3500 | Tray | 1d | |||||||
| Win Source | WS-FDZ299P | 64,200 | 115 | 13h | ||||||||
| ICPartonline | FDZ299P | 28,662 | 4d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-02-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2007-07-09
관련 부품
VishaySI8489EDB-T2-E1
SI8489EDB-T2-E1 P-channel MOSFET Transistor; 4.3 A; 20 V; 4-Pin MICRO FOOT
VishaySI8472DB-T2-E1
780mW(Ta) 8V 900mV@ 250¦ÌA 18nC@ 8 V 1N 20V 44m¦¸@ 1.5A,4.5V 630pF@10V BGA 960¦Ìm*960¦Ìm*260¦Ìm
설명
유통업체에서 제공한 onsemi FDZ299P에 대한 설명입니다.
MOSFET P-CH 20V 4.6A BGA
P-Channel 20V 4.6A (Ta) 1.7W (Ta) Surface Mount 9-BGA
Power Field-Effect Transistor, 4.6A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:4.6A; On-Resistance, Rds(on):0.055ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:D2-PAK RoHS Compliant: No
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageBGA
MountSurface Mount
Number of Pins9
Number of Terminals9
Technical
Continuous Drain Current (ID)4.6 A
Current Rating-4.6 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance55 mΩ
Drain to Source Voltage (Vdss)-20 V
Fall Time9 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance742 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.7 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.7 W
Rds On Max55 mΩ
Rise Time9 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)-20 V
Dimensions
Height800 µm