공급망
Lifecycle StatusNRND (Last Updated: 6 months ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 6 months ago)
관련 부품
Diodes Inc.DMN2011UFDE-7
MOSFET N-CH 20V 11.7A UDFN2020-6 / 20V N-CHANNEL ENHANCEMENT MODE MOSFET
InfineonIRLHS6242TRPBF
Single N-Channel 20V 11.7 mOhm 14 nC HEXFET® Power Mosfet - PQFN 2 x 2 mm
설명
유통업체에서 제공한 onsemi FDZ1323NZ에 대한 설명입니다.
Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET 20V, 10A, 13mΩ
Power Field-Effect Transistor, 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Dual MOSFET, N Channel, 20 V, 10 A, 13 mohm
Trans MOSFET N-CH 20V 10A 6-Pin WLCSP T/R
2W 12V 1.2V@ 250µA 24nC@ 10V 2individualNChannel 20V 13mΩ@ 1A,4.5V 10A 2.055nF@10V BGA SMD mount 1.5mm*1mm*600μm
MOSFET COMMONDRAIN N-CH. 2.5 V P
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced PowerTrench® process with state of the art“low pitch” WLCSP packaging process, the FDZ1323NZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, lowgate charge and low rS1S2(on).
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight50 mg
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vds)20 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance2.055 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape & Reel
Power Dissipation500 mW
Rds On Max13 mΩ
Rise Time13 ns
Turn-Off Delay Time34 ns
Turn-On Delay Time12 ns
Dimensions
Height350 µm
Length2.3 mm
Width1.3 mm