공급망
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date2006-03-22
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
설명
유통업체에서 제공한 onsemi FDY2000PZ에 대한 설명입니다.
Dual P-Channel PowerTrench® MOSFET -20V, -0.35A, 1.2Ω
Dual P-Channel 20 V 1.2 ohm Surface Mount Specified PowerTrench Mosfet - SC-89-6
This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = - 2.5v.
625mW 8V 1.5V@ 250µA 1.4nC@ 4.5V 2individualPChannel 20V 1.2Ω@ 350mA,4.5V 350mA 100pF@10V SOT-563F SMD mount 1.6mm*880μm*780μm
MOSFET, DUAL, P, SMD, SC89; Module Configuration:Dual; Transistor Polarity:P Channel; Continuous Drain Current Id:350mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.03V; Power Dissipation Pd:625mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:-350mA; Package / Case:SC-89; Power Dissipation Pd:625mW; Pulse Current Idm:1A; SMD Marking:A; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1.5V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSC
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight32 mg
Technical
Continuous Drain Current (ID)350 mA
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationDual
Fall Time13 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance100 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation625 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation446 mW
Rds On Max1.2 Ω
Rise Time13 ns
Schedule B8541210080
Threshold Voltage-1.03 V
Turn-Off Delay Time8 ns
Turn-On Delay Time6 ns
Dimensions
Height600 µm
Length1.7 mm
Width1.2 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책