공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-07-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-03-15
LTD Date2010-09-15
설명
유통업체에서 제공한 onsemi FDW2521C에 대한 설명입니다.
Trans MOSFET N/P-CH 20V 5.5A/3.8A 8-Pin TSSOP W T/R
MOSFET N/P-CH 20V 8-TSSOP
MOSFET N/P-CH 20V 5.5A 8TSSOP
SMALL SIGNAL P-CHANNEL MOSFET
Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA
MOSFETs 20V/-20V, N/P
MOSFET, DUAL, N, SMD, TSSOP-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:5.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):21mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSSOP; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:1082pF; Cont Current Id N Channel:5.5A; Cont Current Id P Channel:3.8A; Current Id Max:5.5A; On State Resistance N Channel Max:21mohm; On State Resistance P Channel Max:43mohm; Package / Case:TSSOP; Power Dissipation Pd:1W; Pulse Current Idm N Channel:30A; Pulse Current Idm P Channel:30A; SMD Marking:2521C; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th N Channel 1 Min:0.6V; Voltage Vgs th P Channel Min:-0.6V
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기술 사양
Physical
Case/PackageTSSOP
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.5 A
Current Rating5.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)20 V
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.082 nF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
Power Dissipation1 W
Rds On Max21 mΩ
Threshold Voltage800 mV
Turn-Off Delay Time34 ns
Voltage Rating (DC)20 V
Dimensions
Height1 mm
Length3 mm
Width4.4 mm