공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-12-06
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
Diodes Inc.ZXMN10A25GTA
ZXMN10A25G Series N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount-SOT-223-3
설명
유통업체에서 제공한 onsemi FDT86106LZ에 대한 설명입니다.
MOSFET N-CH 100V 3.2A SOT-223-4 / Trans MOSFET N-CH 100V 3.2A 4-Pin(3+Tab) SOT-223 T/R
FDT86106LZ Series 100 V 3.2 A 108 mOhm N-Ch PowerTrench Mosfet - SOT-223-3
N-Channel PowerTrench® MOSFET 100V, 3.2A, 108mΩ
MOSFET, N CH, 100V, 3.2A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.08ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:12A; Voltage Vgs th Max:2.2V
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight250.2 mg
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance108 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time1.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance315 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.2 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs1.5 V
Number of Channels1
Number of Elements1
Power Dissipation1 W
Rds On Max108 mΩ
Rise Time1.3 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time10 ns
Turn-On Delay Time3.8 ns
Dimensions
Height1.8 mm
Length3.7 mm
Width6.7 mm