공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-06-20
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
Diodes Inc.ZXMC10A816N8TC
Dual MOSFET, Complementary N and P Channel, 100 V, 100 V, 2.1 A, 2.1 A, 0.17 ohm
설명
유통업체에서 제공한 onsemi FDS89161LZ에 대한 설명입니다.
Dual N-Channel Shielded Gate PowerTrench® MOSFET 100V, 2.7A, 105mΩ
FDS89161LZ Series 100 V 2.7 A 105 mOhm Dual N-Ch PowerTrench Mosfet - SOIC-8
Transistor MOSFET Array Dual N-CH 100V 2.7A 8-Pin SOIC T/R
Avnet Japan
1.6W 20V 2.2V@ 250¦ÌA 5.3nC@ 10V 2individualNChannel 100V 105m¦¸@ 2.7A,10V 2.7A 302pF@50V SOIC-8 SMD mount 4.9mm*3.9mm*1.75mm
MOSFET, N-CH, 100V, 2.7A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.7A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V;
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resisitance and yet maintain superior switching performance. G-S zener has been added to enhance ESD voltage level.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight187 mg
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance105 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance302 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation31 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation31 W
Rds On Max105 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time9.5 ns
Turn-On Delay Time3.8 ns
Dimensions
Height1.75 mm
Length4.9 mm
Width3.9 mm