MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0113ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:3W;
MOSFET, N; Transistor Type:MOSFET; Transistor Polarity:N; Typ Voltage Vds:30V; Cont Current Id:13A; On State Resistance:11.3mohm; Voltage Vgs Rds on Measurement:10V; Typ Voltage Vgs th:1.8V; Case Style:SO-8; Termination Type:SMD; Transistor Case Style:SO
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.