가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Microchip USA | FDS6064N7 | 358 | 300 | Bulk | 2d | |||||||
| Win Source | WS-FDS6064N7 | 7,800 | 25 | 3h | ||||||||
| Worldway Electronics | FDS6064N7 | 10,173 | 7 | Tape & Reel | 2d | |||||||
| RC Electronics | FDS6064N7 | 42,090 | 1 | >1wk | ||||||||
| SHENGYU ELECTRONICS | FDS6064N7 | 11,019 | 1 | 5d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-02-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2010-06-03
LTD Date2010-12-03
관련 부품
InfineonIRF8252PBF
2.5W(Ta) 20V 2.35V@ 100¦ÌA 53nC@ 4.5 V 1N 25V 2.7m¦¸@ 25A,10V 25A 5.305nF@13V SOIC-8
설명
유통업체에서 제공한 onsemi FDS6064N7에 대한 설명입니다.
MOSFET N-CH 20V 23A 8-SOIC
Power Field-Effect Transistor, 23A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs SO-8 N-CH 20V 23A
MOSFET, N, SMD, FLMP, SO-8; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:23A; Resistance, Rds On:0.0035ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.6V; Case Style:SOIC; Termination Type:SMD; Current, Idm Pulse:60A; Pins, No. of:8; Power Dissipation:3mW; Voltage, Vds Max:20V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)23 A
Current Rating23 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time77 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance7.191 nF
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation3 W
Rds On Max3.5 mΩ
Rise Time22 ns
Turn-Off Delay Time153 ns
Voltage Rating (DC)20 V